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IPP80N06S2L06AKSA1

IPP80N06S2L06AKSA1

For Reference Only

Part Number IPP80N06S2L06AKSA1
PNEDA Part # IPP80N06S2L06AKSA1
Description MOSFET N-CH 55V 80A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,672
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP80N06S2L06AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP80N06S2L06AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP80N06S2L06AKSA1, IPP80N06S2L06AKSA1 Datasheet (Total Pages: 8, Size: 155.34 KB)
PDFIPP80N06S2L06AKSA2 Datasheet Cover
IPP80N06S2L06AKSA2 Datasheet Page 2 IPP80N06S2L06AKSA2 Datasheet Page 3 IPP80N06S2L06AKSA2 Datasheet Page 4 IPP80N06S2L06AKSA2 Datasheet Page 5 IPP80N06S2L06AKSA2 Datasheet Page 6 IPP80N06S2L06AKSA2 Datasheet Page 7 IPP80N06S2L06AKSA2 Datasheet Page 8

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IPP80N06S2L06AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.3mOhm @ 69A, 10V
Vgs(th) (Max) @ Id2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3800pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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