Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPP80R360P7XKSA1

IPP80R360P7XKSA1

For Reference Only

Part Number IPP80R360P7XKSA1
PNEDA Part # IPP80R360P7XKSA1
Description MOSFET N-CH 800V 13A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP80R360P7XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP80R360P7XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP80R360P7XKSA1, IPP80R360P7XKSA1 Datasheet (Total Pages: 13, Size: 966.77 KB)
PDFIPP80R360P7XKSA1 Datasheet Cover
IPP80R360P7XKSA1 Datasheet Page 2 IPP80R360P7XKSA1 Datasheet Page 3 IPP80R360P7XKSA1 Datasheet Page 4 IPP80R360P7XKSA1 Datasheet Page 5 IPP80R360P7XKSA1 Datasheet Page 6 IPP80R360P7XKSA1 Datasheet Page 7 IPP80R360P7XKSA1 Datasheet Page 8 IPP80R360P7XKSA1 Datasheet Page 9 IPP80R360P7XKSA1 Datasheet Page 10 IPP80R360P7XKSA1 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPP80R360P7XKSA1 Datasheet
  • where to find IPP80R360P7XKSA1
  • Infineon Technologies

  • Infineon Technologies IPP80R360P7XKSA1
  • IPP80R360P7XKSA1 PDF Datasheet
  • IPP80R360P7XKSA1 Stock

  • IPP80R360P7XKSA1 Pinout
  • Datasheet IPP80R360P7XKSA1
  • IPP80R360P7XKSA1 Supplier

  • Infineon Technologies Distributor
  • IPP80R360P7XKSA1 Price
  • IPP80R360P7XKSA1 Distributor

IPP80R360P7XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds930pF @ 500V
FET Feature-
Power Dissipation (Max)84W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

The Products You May Be Interested In

PSMN7R6-60PS,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

92A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

38.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2651pF @ 30V

FET Feature

-

Power Dissipation (Max)

149W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STB45N60DM2AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, MDmesh™ DM2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTF3055-160T3LF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

IRLD110PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

540mOhm @ 600mA, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

TPH11003NL,LQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

32A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

2.3V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 21W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

Recently Sold

B350B-13-F

B350B-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMB

BTA10-700BRG

BTA10-700BRG

STMicroelectronics

TRIAC 700V 10A TO220AB

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

25LC128-I/ST

25LC128-I/ST

Microchip Technology

IC EEPROM 128K SPI 10MHZ 8TSSOP

0466005.NRHF

0466005.NRHF

Littelfuse

FUSE BOARD MNT 5A 32VAC/VDC 1206

MM3Z4V7T1G

MM3Z4V7T1G

ON Semiconductor

DIODE ZENER 4.7V 300MW SOD323

TAJA475K016RNJ

TAJA475K016RNJ

CAP TANT 4.7UF 10% 16V 1206

74VHC14MTCX

74VHC14MTCX

ON Semiconductor

IC INVERTER SCHMITT 6CH 14TSSOP

BLM15AG221SN1D

BLM15AG221SN1D

Murata

FERRITE BEAD 220 OHM 0402 1LN

ADM6996MX-AD-T-1

ADM6996MX-AD-T-1

Infineon Technologies

IC SWITCH ETHER 5PORT 128-FQFP

MAX14780EESA+T

MAX14780EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

MAX3387EEUG+T

MAX3387EEUG+T

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP