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IPP90R1K0C3XK

IPP90R1K0C3XK

For Reference Only

Part Number IPP90R1K0C3XK
PNEDA Part # IPP90R1K0C3XK
Description MOSFET N-CH 900V TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,830
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP90R1K0C3XK Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP90R1K0C3XK
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP90R1K0C3XK, IPP90R1K0C3XK Datasheet (Total Pages: 10, Size: 284.57 KB)
PDFIPP90R1K0C3XK Datasheet Cover
IPP90R1K0C3XK Datasheet Page 2 IPP90R1K0C3XK Datasheet Page 3 IPP90R1K0C3XK Datasheet Page 4 IPP90R1K0C3XK Datasheet Page 5 IPP90R1K0C3XK Datasheet Page 6 IPP90R1K0C3XK Datasheet Page 7 IPP90R1K0C3XK Datasheet Page 8 IPP90R1K0C3XK Datasheet Page 9 IPP90R1K0C3XK Datasheet Page 10

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IPP90R1K0C3XK Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 100V
FET Feature-
Power Dissipation (Max)89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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