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IPS040N03LGBKMA1

IPS040N03LGBKMA1

For Reference Only

Part Number IPS040N03LGBKMA1
PNEDA Part # IPS040N03LGBKMA1
Description MOSFET N-CH 30V 90A TO251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,304
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS040N03LGBKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS040N03LGBKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS040N03LGBKMA1, IPS040N03LGBKMA1 Datasheet (Total Pages: 10, Size: 411.1 KB)
PDFIPS040N03LGBKMA1 Datasheet Cover
IPS040N03LGBKMA1 Datasheet Page 2 IPS040N03LGBKMA1 Datasheet Page 3 IPS040N03LGBKMA1 Datasheet Page 4 IPS040N03LGBKMA1 Datasheet Page 5 IPS040N03LGBKMA1 Datasheet Page 6 IPS040N03LGBKMA1 Datasheet Page 7 IPS040N03LGBKMA1 Datasheet Page 8 IPS040N03LGBKMA1 Datasheet Page 9 IPS040N03LGBKMA1 Datasheet Page 10

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IPS040N03LGBKMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 15V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak

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