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IPS10N03LA G

IPS10N03LA G

For Reference Only

Part Number IPS10N03LA G
PNEDA Part # IPS10N03LA-G
Description MOSFET N-CH 25V 30A IPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,226
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS10N03LA G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS10N03LA G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS10N03LA G, IPS10N03LA G Datasheet (Total Pages: 12, Size: 539.19 KB)
PDFIPU10N03LA G Datasheet Cover
IPU10N03LA G Datasheet Page 2 IPU10N03LA G Datasheet Page 3 IPU10N03LA G Datasheet Page 4 IPU10N03LA G Datasheet Page 5 IPU10N03LA G Datasheet Page 6 IPU10N03LA G Datasheet Page 7 IPU10N03LA G Datasheet Page 8 IPU10N03LA G Datasheet Page 9 IPU10N03LA G Datasheet Page 10 IPU10N03LA G Datasheet Page 11

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IPS10N03LA G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1358pF @ 15V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak

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