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IPS50R520CPAKMA1

IPS50R520CPAKMA1

For Reference Only

Part Number IPS50R520CPAKMA1
PNEDA Part # IPS50R520CPAKMA1
Description MOSFET N-CH 500V 7.1A TO251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS50R520CPAKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS50R520CPAKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS50R520CPAKMA1, IPS50R520CPAKMA1 Datasheet (Total Pages: 10, Size: 746.27 KB)
PDFIPS50R520CPAKMA1 Datasheet Cover
IPS50R520CPAKMA1 Datasheet Page 2 IPS50R520CPAKMA1 Datasheet Page 3 IPS50R520CPAKMA1 Datasheet Page 4 IPS50R520CPAKMA1 Datasheet Page 5 IPS50R520CPAKMA1 Datasheet Page 6 IPS50R520CPAKMA1 Datasheet Page 7 IPS50R520CPAKMA1 Datasheet Page 8 IPS50R520CPAKMA1 Datasheet Page 9 IPS50R520CPAKMA1 Datasheet Page 10

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IPS50R520CPAKMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs520mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds680pF @ 100V
FET Feature-
Power Dissipation (Max)66W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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