Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPS70R1K4P7SAKMA1

IPS70R1K4P7SAKMA1

For Reference Only

Part Number IPS70R1K4P7SAKMA1
PNEDA Part # IPS70R1K4P7SAKMA1
Description MOSFET N-CHANNEL 700V 4A TO251
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 17,172
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS70R1K4P7SAKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS70R1K4P7SAKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPS70R1K4P7SAKMA1 Datasheet
  • where to find IPS70R1K4P7SAKMA1
  • Infineon Technologies

  • Infineon Technologies IPS70R1K4P7SAKMA1
  • IPS70R1K4P7SAKMA1 PDF Datasheet
  • IPS70R1K4P7SAKMA1 Stock

  • IPS70R1K4P7SAKMA1 Pinout
  • Datasheet IPS70R1K4P7SAKMA1
  • IPS70R1K4P7SAKMA1 Supplier

  • Infineon Technologies Distributor
  • IPS70R1K4P7SAKMA1 Price
  • IPS70R1K4P7SAKMA1 Distributor

IPS70R1K4P7SAKMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs4.7nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds158pF @ 400V
FET Feature-
Power Dissipation (Max)22.7W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

2SK4089LS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

720mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

45.4nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FI(LS)

Package / Case

TO-220-3 Full Pack

2SK4085LS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

46.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FI(LS)

Package / Case

TO-220-3 Full Pack

PMPB100ENEX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

DFN2020MD-6

Package / Case

6-UDFN Exposed Pad

TPH3206LD

Transphorm

Manufacturer

Transphorm

Series

-

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 11A, 8V

Vgs(th) (Max) @ Id

2.6V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 4.5V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 480V

FET Feature

-

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (8x8)

Package / Case

4-PowerDFN

STP140N8F7

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.3mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6340pF @ 40V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

MP4560DN-LF-Z

MP4560DN-LF-Z

Monolithic Power Systems Inc.

IC REG BUCK ADJUSTABLE 2A 8SOIC

TLP350H(F)

TLP350H(F)

Toshiba Semiconductor and Storage

X36 PB-F PHOTOCOUPLER THRU HOLE

CY2305SXI-1HT

CY2305SXI-1HT

Cypress Semiconductor

IC CLK ZDB 5OUT 133MHZ 8SOIC

PM200DV1A120

PM200DV1A120

Powerex Inc.

MOD IPM V1 DUAL 200A 1200V

SSM3J328R,LF

SSM3J328R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

FSAM30SH60A

FSAM30SH60A

ON Semiconductor

SMART POWER MODULE 30A SPM32-AA

LL4148

LL4148

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD80

SP3232ECN-L

SP3232ECN-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

DS9503P+

DS9503P+

Maxim Integrated

TVS DIODE 7.5V 6TSOC

STM6601CM2DDM6F

STM6601CM2DDM6F

STMicroelectronics

IC SUPERVISOR 3.1V 12TDFN

RL2010FK-070R43L

RL2010FK-070R43L

Yageo

RES 0.43 OHM 1% 3/4W 2010

H1102NLT

H1102NLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100