Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPS70R950CEAKMA1

IPS70R950CEAKMA1

For Reference Only

Part Number IPS70R950CEAKMA1
PNEDA Part # IPS70R950CEAKMA1
Description MOSFET NCH 700V 7.4A TO251
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 13,770
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS70R950CEAKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS70R950CEAKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPS70R950CEAKMA1 Datasheet
  • where to find IPS70R950CEAKMA1
  • Infineon Technologies

  • Infineon Technologies IPS70R950CEAKMA1
  • IPS70R950CEAKMA1 PDF Datasheet
  • IPS70R950CEAKMA1 Stock

  • IPS70R950CEAKMA1 Pinout
  • Datasheet IPS70R950CEAKMA1
  • IPS70R950CEAKMA1 Supplier

  • Infineon Technologies Distributor
  • IPS70R950CEAKMA1 Price
  • IPS70R950CEAKMA1 Distributor

IPS70R950CEAKMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25°C7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs15.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds328pF @ 100V
FET FeatureSuper Junction
Power Dissipation (Max)68W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251
Package / CaseTO-251-3 Stub Leads, IPak

The Products You May Be Interested In

FDMA410NZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

23mOhm @ 9.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1080pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-MicroFET (2x2)

Package / Case

6-VDFN Exposed Pad

TK5Q65W,S1Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

5.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.22Ohm @ 2.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 170µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 300V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Stub Leads, IPak

DMN3009SFG-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 15V

FET Feature

-

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

FQA5N90

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.3Ohm @ 2.9A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 25V

FET Feature

-

Power Dissipation (Max)

185W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

SI7463DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.2mOhm @ 18.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.9W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

AOD413

AOD413

Alpha & Omega Semiconductor

MOSFET P-CH 40V 24A TO252

AT32UC3C1256C-AUT

AT32UC3C1256C-AUT

Microchip Technology

IC MCU 32BIT 256KB FLASH 100TQFP

NTJD4152PT1G

NTJD4152PT1G

ON Semiconductor

MOSFET 2P-CH 20V 0.88A SOT-363

LTC3400BES6#TRMPBF

LTC3400BES6#TRMPBF

Linear Technology/Analog Devices

IC REG BOOST ADJ 600MA TSOT23-6

74F00SC

74F00SC

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA

MIC49150WR

MIC49150WR

Microchip Technology

IC REG LIN POS ADJ 1.5A SPAK-5

3-1462039-1

3-1462039-1

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 12VDC

TLMY1000-GS08

TLMY1000-GS08

Vishay Semiconductor Opto Division

LED YELLOW 0603 SMD

MX25L6433FM2I-08G

MX25L6433FM2I-08G

Macronix

IC FLASH SERIAL NOR 64M 8SOP

SQJ459EP-T1_GE3

SQJ459EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 52A POWERPAKSO-8

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23