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IPT012N08N5ATMA1

IPT012N08N5ATMA1

For Reference Only

Part Number IPT012N08N5ATMA1
PNEDA Part # IPT012N08N5ATMA1
Description MOSFET N-CH 80V 300A 8HSOF
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 29,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPT012N08N5ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPT012N08N5ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPT012N08N5ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 150A, 10V
Vgs(th) (Max) @ Id3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs223nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds17000pF @ 40V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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