IPT029N08N5ATMA1
For Reference Only
| Part Number | IPT029N08N5ATMA1 |
| PNEDA Part # | IPT029N08N5ATMA1 |
| Description | MV POWER MOS |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 19,458 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPT029N08N5ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPT029N08N5ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPT029N08N5ATMA1 Datasheet
- where to find IPT029N08N5ATMA1
- Infineon Technologies
- Infineon Technologies IPT029N08N5ATMA1
- IPT029N08N5ATMA1 PDF Datasheet
- IPT029N08N5ATMA1 Stock
- IPT029N08N5ATMA1 Pinout
- Datasheet IPT029N08N5ATMA1
- IPT029N08N5ATMA1 Supplier
- Infineon Technologies Distributor
- IPT029N08N5ATMA1 Price
- IPT029N08N5ATMA1 Distributor
IPT029N08N5ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 5 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Ta), 169A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 150A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 108µA |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 40V |
| FET Feature | - |
| Power Dissipation (Max) | 168W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8 |
| Package / Case | 8-PowerSFN |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 33mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 75V FET Feature - Power Dissipation (Max) 1.6W (Ta), 57W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Infineon Technologies Series FETKY™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 62mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.77A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 33mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 750mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 440mOhm @ 8A, 10V Vgs(th) (Max) @ Id 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1830pF @ 25V FET Feature - Power Dissipation (Max) 347W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXFA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
