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IPU039N03LGXK

IPU039N03LGXK

For Reference Only

Part Number IPU039N03LGXK
PNEDA Part # IPU039N03LGXK
Description MOSFET N-CH 30V 50A IPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,128
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU039N03LGXK Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU039N03LGXK
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPU039N03LGXK, IPU039N03LGXK Datasheet (Total Pages: 10, Size: 788.2 KB)
PDFIPU039N03LGXK Datasheet Cover
IPU039N03LGXK Datasheet Page 2 IPU039N03LGXK Datasheet Page 3 IPU039N03LGXK Datasheet Page 4 IPU039N03LGXK Datasheet Page 5 IPU039N03LGXK Datasheet Page 6 IPU039N03LGXK Datasheet Page 7 IPU039N03LGXK Datasheet Page 8 IPU039N03LGXK Datasheet Page 9 IPU039N03LGXK Datasheet Page 10

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IPU039N03LGXK Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5300pF @ 15V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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