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IPU105N03L G

IPU105N03L G

For Reference Only

Part Number IPU105N03L G
PNEDA Part # IPU105N03L-G
Description MOSFET N-CH 30V 35A IPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,424
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU105N03L G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU105N03L G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPU105N03L G, IPU105N03L G Datasheet (Total Pages: 12, Size: 547.04 KB)
PDFIPU105N03L G Datasheet Cover
IPU105N03L G Datasheet Page 2 IPU105N03L G Datasheet Page 3 IPU105N03L G Datasheet Page 4 IPU105N03L G Datasheet Page 5 IPU105N03L G Datasheet Page 6 IPU105N03L G Datasheet Page 7 IPU105N03L G Datasheet Page 8 IPU105N03L G Datasheet Page 9 IPU105N03L G Datasheet Page 10 IPU105N03L G Datasheet Page 11

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IPU105N03L G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 15V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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