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IPU10N03LA G

IPU10N03LA G

For Reference Only

Part Number IPU10N03LA G
PNEDA Part # IPU10N03LA-G
Description MOSFET N-CH 25V 30A IPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,262
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU10N03LA G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU10N03LA G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPU10N03LA G, IPU10N03LA G Datasheet (Total Pages: 12, Size: 539.19 KB)
PDFIPU10N03LA G Datasheet Cover
IPU10N03LA G Datasheet Page 2 IPU10N03LA G Datasheet Page 3 IPU10N03LA G Datasheet Page 4 IPU10N03LA G Datasheet Page 5 IPU10N03LA G Datasheet Page 6 IPU10N03LA G Datasheet Page 7 IPU10N03LA G Datasheet Page 8 IPU10N03LA G Datasheet Page 9 IPU10N03LA G Datasheet Page 10 IPU10N03LA G Datasheet Page 11

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IPU10N03LA G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1358pF @ 15V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageP-TO251-3-1
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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