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IPU50R3K0CEBKMA1

IPU50R3K0CEBKMA1

For Reference Only

Part Number IPU50R3K0CEBKMA1
PNEDA Part # IPU50R3K0CEBKMA1
Description MOSFET N-CH 500V 1.7A TO-251
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,070
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU50R3K0CEBKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU50R3K0CEBKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPU50R3K0CEBKMA1, IPU50R3K0CEBKMA1 Datasheet (Total Pages: 14, Size: 1,638.63 KB)
PDFIPU50R3K0CEBKMA1 Datasheet Cover
IPU50R3K0CEBKMA1 Datasheet Page 2 IPU50R3K0CEBKMA1 Datasheet Page 3 IPU50R3K0CEBKMA1 Datasheet Page 4 IPU50R3K0CEBKMA1 Datasheet Page 5 IPU50R3K0CEBKMA1 Datasheet Page 6 IPU50R3K0CEBKMA1 Datasheet Page 7 IPU50R3K0CEBKMA1 Datasheet Page 8 IPU50R3K0CEBKMA1 Datasheet Page 9 IPU50R3K0CEBKMA1 Datasheet Page 10 IPU50R3K0CEBKMA1 Datasheet Page 11

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IPU50R3K0CEBKMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs4.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds84pF @ 100V
FET Feature-
Power Dissipation (Max)18W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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