Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPU50R950CEAKMA2

IPU50R950CEAKMA2

For Reference Only

Part Number IPU50R950CEAKMA2
PNEDA Part # IPU50R950CEAKMA2
Description MOSFET N-CH 500V 4.3A TO251
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 7 - Jul 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU50R950CEAKMA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU50R950CEAKMA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPU50R950CEAKMA2 Datasheet
  • where to find IPU50R950CEAKMA2
  • Infineon Technologies

  • Infineon Technologies IPU50R950CEAKMA2
  • IPU50R950CEAKMA2 PDF Datasheet
  • IPU50R950CEAKMA2 Stock

  • IPU50R950CEAKMA2 Pinout
  • Datasheet IPU50R950CEAKMA2
  • IPU50R950CEAKMA2 Supplier

  • Infineon Technologies Distributor
  • IPU50R950CEAKMA2 Price
  • IPU50R950CEAKMA2 Distributor

IPU50R950CEAKMA2 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds231pF @ 100V
FET Feature-
Power Dissipation (Max)53W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

STP11NM60FP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

EKV550

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

50A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 10V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IXFR26N60Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

DMG7401SFGQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 20V

Rds On (Max) @ Id, Vgs

11mOhm @ 12A, 20V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2987pF @ 15V

FET Feature

-

Power Dissipation (Max)

940mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

FDS2670

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1228pF @ 100V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

GRM155R61H474KE11D

GRM155R61H474KE11D

Murata

CAP CER 0.47UF 50V X5R 0402

AD9515BCPZ

AD9515BCPZ

Analog Devices

IC CLK BUFFER 1:2 1.6GHZ 32LFCSP

BAT54WS-7-F

BAT54WS-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 100MA SOD323

ADP3339AKCZ-2.5-R7

ADP3339AKCZ-2.5-R7

Analog Devices

IC REG LINEAR 2.5V 1.5A SOT223-3

BAT54A

BAT54A

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT23-3

NANOSMDC020F-2

NANOSMDC020F-2

Littelfuse

PTC RESET FUSE 24V 200MA 1206

DS2401P+T&R

DS2401P+T&R

Maxim Integrated

IC SILICON SERIAL NUMBER 6TSOC

B320A-13-F

B320A-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 3A SMA

SSM2305RMZ-R2

SSM2305RMZ-R2

Analog Devices

IC AMP AUDIO 2.8W MONO D 8MSOP

MC14066BDG

MC14066BDG

ON Semiconductor

IC MULTIPLEXER QUAD 4X1 14SOIC

STPS0520Z

STPS0520Z

STMicroelectronics

DIODE SCHOTTKY 20V 500MA SOD123

ASDMB-12.000MHZ-LC-T

ASDMB-12.000MHZ-LC-T

Abracon

MEMS OSC XO 12.0000MHZ LVCMOS