IPU60R1K5CEAKMA1
For Reference Only
| Part Number | IPU60R1K5CEAKMA1 |
| PNEDA Part # | IPU60R1K5CEAKMA1 |
| Description | MOSFET N-CH 600V TO-251-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,640 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 23 - Jun 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPU60R1K5CEAKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPU60R1K5CEAKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IPU60R1K5CEAKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CE |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.9A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V FET Feature - Power Dissipation (Max) 1.07W (Ta), 35.71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 84A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5mOhm @ 18A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3845pF @ 15V FET Feature - Power Dissipation (Max) 83W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
