IPU60R2K0C6AKMA1
For Reference Only
| Part Number | IPU60R2K0C6AKMA1 |
| PNEDA Part # | IPU60R2K0C6AKMA1 |
| Description | MOSFET N-CH 600V TO-251 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,520 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPU60R2K0C6AKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPU60R2K0C6AKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPU60R2K0C6AKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 760mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 22.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer Vicor Corporation Series Picor® µRDS(on)FET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 5V Current - Continuous Drain (Id) @ 25°C 60A (Ta) Drive Voltage (Max Rds On, Min Rds On) 3.5V, 4.5V Rds On (Max) @ Id, Vgs 0.45mOhm @ 60A, 4.5V Vgs(th) (Max) @ Id 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs 65nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 5V FET Feature - Power Dissipation (Max) 3.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-LGA (4.1x8) Package / Case 3-FLGA |
Manufacturer Toshiba Semiconductor and Storage Series π-MOSVI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9.1pF @ 3V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package USM Package / Case SC-70, SOT-323 |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 1A, 10V Vgs(th) (Max) @ Id 3.5V @ 0.21mA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 474pF @ 100V FET Feature Super Junction Power Dissipation (Max) 86W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 45mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 452pF @ 10V FET Feature - Power Dissipation (Max) 960mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
