IPU60R2K0C6AKMA1
For Reference Only
| Part Number | IPU60R2K0C6AKMA1 |
| PNEDA Part # | IPU60R2K0C6AKMA1 |
| Description | MOSFET N-CH 600V TO-251 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,520 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPU60R2K0C6AKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPU60R2K0C6AKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPU60R2K0C6AKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 760mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 22.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 1A, 10V Vgs(th) (Max) @ Id 3.5V @ 0.21mA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 474pF @ 100V FET Feature Super Junction Power Dissipation (Max) 86W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer STMicroelectronics Series MDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1050V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 210pF @ 100V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Full Pack Package / Case TO-220-3 Full Pack |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 140A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.6mOhm @ 70A, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 127nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7660pF @ 25V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268HV Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 45mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 452pF @ 10V FET Feature - Power Dissipation (Max) 960mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
