IPU80R900P7AKMA1
For Reference Only
| Part Number | IPU80R900P7AKMA1 |
| PNEDA Part # | IPU80R900P7AKMA1 |
| Description | MOSFET N-CH 800V 6A TO251-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 12,498 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPU80R900P7AKMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPU80R900P7AKMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPU80R900P7AKMA1 Datasheet
- where to find IPU80R900P7AKMA1
- Infineon Technologies
- Infineon Technologies IPU80R900P7AKMA1
- IPU80R900P7AKMA1 PDF Datasheet
- IPU80R900P7AKMA1 Stock
- IPU80R900P7AKMA1 Pinout
- Datasheet IPU80R900P7AKMA1
- IPU80R900P7AKMA1 Supplier
- Infineon Technologies Distributor
- IPU80R900P7AKMA1 Price
- IPU80R900P7AKMA1 Distributor
IPU80R900P7AKMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 110µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 500V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
The Products You May Be Interested In
|
Manufacturer Panasonic Electronic Components Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 18Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 12pF @ 3V FET Feature - Power Dissipation (Max) 100mW (Ta) Operating Temperature 125°C (TJ) Mounting Type Surface Mount Supplier Device Package SSSMini3-F1 Package / Case SOT-723 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11340pF @ 25V FET Feature - Power Dissipation (Max) 349W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 145mOhm @ 22A, 10V Vgs(th) (Max) @ Id 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs 355nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4510pF @ 25V FET Feature - Power Dissipation (Max) 417W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package T-MAX™ [B2] Package / Case TO-247-3 Variant |
Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 0V, 10V Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 16A, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 25V FET Feature - Power Dissipation (Max) 960W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
