IPW60R080P7XKSA1
For Reference Only
| Part Number | IPW60R080P7XKSA1 |
| PNEDA Part # | IPW60R080P7XKSA1 |
| Description | MOSFET N-CH 600V 37A TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,908 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 30 - May 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPW60R080P7XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPW60R080P7XKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPW60R080P7XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 11.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 590µA |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 129W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
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Manufacturer Infineon Technologies Series OptiMOS™-5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 240A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.8V @ 160µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9264pF @ 40V FET Feature - Power Dissipation (Max) 230W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HSOF-8-1 Package / Case 8-PowerSFN |
