Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPW60R190C6FKSA1

IPW60R190C6FKSA1

For Reference Only

Part Number IPW60R190C6FKSA1
PNEDA Part # IPW60R190C6FKSA1
Description MOSFET N-CH 600V 20.2A TO247
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,588
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPW60R190C6FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPW60R190C6FKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPW60R190C6FKSA1 Datasheet
  • where to find IPW60R190C6FKSA1
  • Infineon Technologies

  • Infineon Technologies IPW60R190C6FKSA1
  • IPW60R190C6FKSA1 PDF Datasheet
  • IPW60R190C6FKSA1 Stock

  • IPW60R190C6FKSA1 Pinout
  • Datasheet IPW60R190C6FKSA1
  • IPW60R190C6FKSA1 Supplier

  • Infineon Technologies Distributor
  • IPW60R190C6FKSA1 Price
  • IPW60R190C6FKSA1 Distributor

IPW60R190C6FKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 100V
FET Feature-
Power Dissipation (Max)151W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

The Products You May Be Interested In

RSD160P05TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

45V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 10V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

CPT3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SIHA15N65E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2460pF @ 100V

FET Feature

-

Power Dissipation (Max)

34W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Full Pack

Package / Case

TO-220-3 Full Pack

TK40S10K3Z(T6L1,NQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3110pF @ 10V

FET Feature

-

Power Dissipation (Max)

93W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK+

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STD5NK52ZD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

520V

Current - Continuous Drain (Id) @ 25°C

4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

16.9nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

529pF @ 25V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

TK8A10K3,S5Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

120mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 10V

FET Feature

-

Power Dissipation (Max)

18W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Recently Sold

WSL0603R1000FEA18

WSL0603R1000FEA18

Vishay Dale

RES 0.1 OHM 1% 1/5W 0603

CM1230-02CP

CM1230-02CP

ON Semiconductor

TVS DIODE 3.3V 9.8V 4WLCSP

WSL1206R0100FEA

WSL1206R0100FEA

Vishay Dale

RES 0.01 OHM 1% 1/4W 1206

MIC2025-1YM

MIC2025-1YM

Microchip Technology

IC SW DISTRIBUTION 1CHAN 8SOIC

PMBT3904VS,115

PMBT3904VS,115

Nexperia

TRANS 2NPN 40V 0.2A SOT666

SRN8040-R50Y

SRN8040-R50Y

Bourns

FIXED IND 500NH 10A 7 MOHM SMD

MBR0540T1G

MBR0540T1G

ON Semiconductor

DIODE SCHOTTKY 40V 500MA SOD123

STM32F407IGH6

STM32F407IGH6

STMicroelectronics

IC MCU 32BIT 1MB FLASH 176UBGA

TS922IDT

TS922IDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

STM32F103RCT6

STM32F103RCT6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 64LQFP

ADF4113BRU

ADF4113BRU

Analog Devices

IC SYNTH PLL RF 4.0GHZ 16-TSSOP

AOD413

AOD413

Alpha & Omega Semiconductor

MOSFET P-CH 40V 24A TO252