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IPW65R037C6FKSA1

IPW65R037C6FKSA1

For Reference Only

Part Number IPW65R037C6FKSA1
PNEDA Part # IPW65R037C6FKSA1
Description MOSFET N-CH 650V 83.2A TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPW65R037C6FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPW65R037C6FKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPW65R037C6FKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ C6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C83.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs37mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs330nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7240pF @ 100V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

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