Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPW65R048CFDAFKSA1

IPW65R048CFDAFKSA1

For Reference Only

Part Number IPW65R048CFDAFKSA1
PNEDA Part # IPW65R048CFDAFKSA1
Description MOSFET N-CH 650V TO-247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,262
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPW65R048CFDAFKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPW65R048CFDAFKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPW65R048CFDAFKSA1 Datasheet
  • where to find IPW65R048CFDAFKSA1
  • Infineon Technologies

  • Infineon Technologies IPW65R048CFDAFKSA1
  • IPW65R048CFDAFKSA1 PDF Datasheet
  • IPW65R048CFDAFKSA1 Stock

  • IPW65R048CFDAFKSA1 Pinout
  • Datasheet IPW65R048CFDAFKSA1
  • IPW65R048CFDAFKSA1 Supplier

  • Infineon Technologies Distributor
  • IPW65R048CFDAFKSA1 Price
  • IPW65R048CFDAFKSA1 Distributor

IPW65R048CFDAFKSA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, CoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C63.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs48mOhm @ 29.4A, 10V
Vgs(th) (Max) @ Id4.5V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7440pF @ 100V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

The Products You May Be Interested In

STULED656

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

895pF @ 100V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IRF3707ZCSTRLP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

2.25V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1210pF @ 15V

FET Feature

-

Power Dissipation (Max)

57W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NCV8440STT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

59V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id

1.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 4.5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

155pF @ 35V

FET Feature

-

Power Dissipation (Max)

1.69W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

STS15N4LLF5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.9nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1570pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRF2907ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

7427931

7427931

Wurth Electronics

FERRITE BEAD 91 OHM 2SMD 1LN

EPM2210F324I5N

EPM2210F324I5N

Intel

IC CPLD 1700MC 7NS 324FBGA

P170SP1-FC15AR10K

P170SP1-FC15AR10K

TT Electronics/BI

POT 10K OHM 1/20W PLASTIC LOG

S29GL256P11FFIV10

S29GL256P11FFIV10

Cypress Semiconductor

IC FLASH 256M PARALLEL 64FBGA

FN2070-36-08

FN2070-36-08

Schaffner EMC

LINE FILTER 110/250VAC 36A CHASS

EL5211IYEZ-T13

EL5211IYEZ-T13

Renesas Electronics America Inc.

IC OPAMP VFB 2 CIRCUIT 8HMSOP

MBR0520LT1G

MBR0520LT1G

ON Semiconductor

DIODE SCHOTTKY 20V 500MA SOD123

VRF150MP

VRF150MP

Microsemi

RF MOSFET N-CHANNEL 50V M174

PA2512FKE7W0R002E

PA2512FKE7W0R002E

Yageo

METAL CURRENT SENSOR 2512 1% 50P

MT25QL256ABA8ESF-0SIT

MT25QL256ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 256M SPI 133MHZ 16SOP2

MAX3233EEWP

MAX3233EEWP

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SOIC

FDV301N

FDV301N

ON Semiconductor

MOSFET N-CH 25V 220MA SOT-23