IPW65R310CFDFKSA1
For Reference Only
| Part Number | IPW65R310CFDFKSA1 |
| PNEDA Part # | IPW65R310CFDFKSA1 |
| Description | MOSFET N-CH 650V 11.4A TO247 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,264 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPW65R310CFDFKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPW65R310CFDFKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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IPW65R310CFDFKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 4.4A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 440µA |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 104.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 82pF @ 10V FET Feature - Power Dissipation (Max) 1.2W (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package S-Mini Package / Case TO-236-3, SC-59, SOT-23-3 |
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Manufacturer IXYS Series GigaMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 230A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 378nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28000pF @ 25V FET Feature - Power Dissipation (Max) 1670W (Tc) Operating Temperature - Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
