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IPZ65R019C7XKSA1

IPZ65R019C7XKSA1

For Reference Only

Part Number IPZ65R019C7XKSA1
PNEDA Part # IPZ65R019C7XKSA1
Description MOSFET N-CH 650V TO247-4
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,444
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPZ65R019C7XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPZ65R019C7XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPZ65R019C7XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ C7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs19mOhm @ 58.3A, 10V
Vgs(th) (Max) @ Id4V @ 2.92mA
Gate Charge (Qg) (Max) @ Vgs215nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9900pF @ 400V
FET Feature-
Power Dissipation (Max)446W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4
Package / CaseTO-247-4

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