IPZA60R060P7XKSA1
For Reference Only
| Part Number | IPZA60R060P7XKSA1 |
| PNEDA Part # | IPZA60R060P7XKSA1 |
| Description | MOSFET TO247-4 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,992 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPZA60R060P7XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPZA60R060P7XKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPZA60R060P7XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 15.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 800µA |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2895pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 164W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-4 |
| Package / Case | TO-247-4 |
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Manufacturer Infineon Technologies Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 35mOhm @ 37A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 10100pF @ 50V FET Feature - Power Dissipation (Max) 447W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package MAX247™ Package / Case TO-247-3 |
Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id 2.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs 1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28pF @ 25V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
