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IRC630PBF

IRC630PBF

For Reference Only

Part Number IRC630PBF
PNEDA Part # IRC630PBF
Description MOSFET N-CH 200V 9A TO-220-5
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRC630PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRC630PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRC630PBF, IRC630PBF Datasheet (Total Pages: 9, Size: 1,171.9 KB)
PDFIRC630PBF Datasheet Cover
IRC630PBF Datasheet Page 2 IRC630PBF Datasheet Page 3 IRC630PBF Datasheet Page 4 IRC630PBF Datasheet Page 5 IRC630PBF Datasheet Page 6 IRC630PBF Datasheet Page 7 IRC630PBF Datasheet Page 8 IRC630PBF Datasheet Page 9

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IRC630PBF Specifications

ManufacturerVishay Siliconix
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET FeatureCurrent Sensing
Power Dissipation (Max)74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-5
Package / CaseTO-220-5

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