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IRF1010EL

IRF1010EL

For Reference Only

Part Number IRF1010EL
PNEDA Part # IRF1010EL
Description MOSFET N-CH 60V 84A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,724
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF1010EL Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF1010EL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF1010EL, IRF1010EL Datasheet (Total Pages: 11, Size: 127.43 KB)
PDFIRF1010ESTRR Datasheet Cover
IRF1010ESTRR Datasheet Page 2 IRF1010ESTRR Datasheet Page 3 IRF1010ESTRR Datasheet Page 4 IRF1010ESTRR Datasheet Page 5 IRF1010ESTRR Datasheet Page 6 IRF1010ESTRR Datasheet Page 7 IRF1010ESTRR Datasheet Page 8 IRF1010ESTRR Datasheet Page 9 IRF1010ESTRR Datasheet Page 10 IRF1010ESTRR Datasheet Page 11

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IRF1010EL Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3210pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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