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IRF1010Z

IRF1010Z

For Reference Only

Part Number IRF1010Z
PNEDA Part # IRF1010Z
Description MOSFET N-CH 55V 75A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,884
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF1010Z Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF1010Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF1010Z, IRF1010Z Datasheet (Total Pages: 13, Size: 304.65 KB)
PDFIRF1010ZSPBF Datasheet Cover
IRF1010ZSPBF Datasheet Page 2 IRF1010ZSPBF Datasheet Page 3 IRF1010ZSPBF Datasheet Page 4 IRF1010ZSPBF Datasheet Page 5 IRF1010ZSPBF Datasheet Page 6 IRF1010ZSPBF Datasheet Page 7 IRF1010ZSPBF Datasheet Page 8 IRF1010ZSPBF Datasheet Page 9 IRF1010ZSPBF Datasheet Page 10 IRF1010ZSPBF Datasheet Page 11

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IRF1010Z Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2840pF @ 25V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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