Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF1310NL

IRF1310NL

For Reference Only

Part Number IRF1310NL
PNEDA Part # IRF1310NL
Description MOSFET N-CH 100V 42A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,420
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF1310NL Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF1310NL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF1310NL, IRF1310NL Datasheet (Total Pages: 11, Size: 162.13 KB)
PDFIRF1310NSTRR Datasheet Cover
IRF1310NSTRR Datasheet Page 2 IRF1310NSTRR Datasheet Page 3 IRF1310NSTRR Datasheet Page 4 IRF1310NSTRR Datasheet Page 5 IRF1310NSTRR Datasheet Page 6 IRF1310NSTRR Datasheet Page 7 IRF1310NSTRR Datasheet Page 8 IRF1310NSTRR Datasheet Page 9 IRF1310NSTRR Datasheet Page 10 IRF1310NSTRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF1310NL Datasheet
  • where to find IRF1310NL
  • Infineon Technologies

  • Infineon Technologies IRF1310NL
  • IRF1310NL PDF Datasheet
  • IRF1310NL Stock

  • IRF1310NL Pinout
  • Datasheet IRF1310NL
  • IRF1310NL Supplier

  • Infineon Technologies Distributor
  • IRF1310NL Price
  • IRF1310NL Distributor

IRF1310NL Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs36mOhm @ 22A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 160W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

FDMS9408L-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5750pF @ 20V

FET Feature

-

Power Dissipation (Max)

214W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power56

Package / Case

8-PowerTDFN

AOB20C60

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3440pF @ 100V

FET Feature

-

Power Dissipation (Max)

463W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFBF30

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.7Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NTD4856N-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

13.3A (Ta), 89A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2241pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.33W (Ta), 60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

TPCA8065-H,LQ(S

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.4mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.3V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

Recently Sold

SMBJ14A-13-F

SMBJ14A-13-F

Diodes Incorporated

TVS DIODE 14V 23.2V SMB

749022015

749022015

Wurth Electronics

TRANSFORMER LAN 10/100/1000 SMD

A6B595KLWTR-T

A6B595KLWTR-T

Allegro MicroSystems, LLC

IC PWR DRVR 8BIT ADDRESS 20SOIC

PM200DV1A120

PM200DV1A120

Powerex Inc.

MOD IPM V1 DUAL 200A 1200V

STL7N10F7

STL7N10F7

STMicroelectronics

MOSFET N-CH 100V 7A 8POWERFLAT

MAX3645EEE+T

MAX3645EEE+T

Maxim Integrated

IC AMP LIMITING 16-QSOP

SII1161CTU

SII1161CTU

Lattice Semiconductor Corporation

UXGA PANELLINK RECEIVER

PI6C49X0204CWIE

PI6C49X0204CWIE

Diodes Incorporated

IC CLOCK BUFFER 1:4 200MHZ 8SOIC

XC6SLX9-2TQG144C

XC6SLX9-2TQG144C

Xilinx

IC FPGA 102 I/O 144TQFP

AO3407A

AO3407A

Alpha & Omega Semiconductor

MOSFET P-CH 30V 4.3A SOT23

HDT0001

HDT0001

C&K

SWITCH DETECTOR SPST-NO 1MA 5V

SMAZ18-13-F

SMAZ18-13-F

Diodes Incorporated

DIODE ZENER 18V 1W SMA