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IRF1312PBF

IRF1312PBF

For Reference Only

Part Number IRF1312PBF
PNEDA Part # IRF1312PBF
Description MOSFET N-CH 80V 95A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,218
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF1312PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF1312PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF1312PBF, IRF1312PBF Datasheet (Total Pages: 12, Size: 278.92 KB)
PDFIRF1312PBF Datasheet Cover
IRF1312PBF Datasheet Page 2 IRF1312PBF Datasheet Page 3 IRF1312PBF Datasheet Page 4 IRF1312PBF Datasheet Page 5 IRF1312PBF Datasheet Page 6 IRF1312PBF Datasheet Page 7 IRF1312PBF Datasheet Page 8 IRF1312PBF Datasheet Page 9 IRF1312PBF Datasheet Page 10 IRF1312PBF Datasheet Page 11

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IRF1312PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 57A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5450pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 210W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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