Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF1503STRLPBF

IRF1503STRLPBF

For Reference Only

Part Number IRF1503STRLPBF
PNEDA Part # IRF1503STRLPBF
Description MOSFET N-CH 30V 75A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,256
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF1503STRLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF1503STRLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF1503STRLPBF, IRF1503STRLPBF Datasheet (Total Pages: 11, Size: 330.93 KB)
PDFIRF1503SPBF Datasheet Cover
IRF1503SPBF Datasheet Page 2 IRF1503SPBF Datasheet Page 3 IRF1503SPBF Datasheet Page 4 IRF1503SPBF Datasheet Page 5 IRF1503SPBF Datasheet Page 6 IRF1503SPBF Datasheet Page 7 IRF1503SPBF Datasheet Page 8 IRF1503SPBF Datasheet Page 9 IRF1503SPBF Datasheet Page 10 IRF1503SPBF Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF1503STRLPBF Datasheet
  • where to find IRF1503STRLPBF
  • Infineon Technologies

  • Infineon Technologies IRF1503STRLPBF
  • IRF1503STRLPBF PDF Datasheet
  • IRF1503STRLPBF Stock

  • IRF1503STRLPBF Pinout
  • Datasheet IRF1503STRLPBF
  • IRF1503STRLPBF Supplier

  • Infineon Technologies Distributor
  • IRF1503STRLPBF Price
  • IRF1503STRLPBF Distributor

IRF1503STRLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5730pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IRF624STRR

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 2.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

2N7000RLRPG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

FET Feature

-

Power Dissipation (Max)

350mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NTD4905N-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 67A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2340pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta), 44W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

18.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1005pF @ 15V

FET Feature

-

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

IRFS450B

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

9.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

390mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

113nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3800pF @ 25V

FET Feature

-

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PF

Package / Case

TO-3P-3 Full Pack

Recently Sold

MD2369A

MD2369A

Central Semiconductor Corp

TRANS 2NPN 40V 0.5A TO-78

M27C256B-12F1

M27C256B-12F1

STMicroelectronics

IC EPROM 256K PARALLEL 28CDIP

MB95F698KPMC-G-SNE2

MB95F698KPMC-G-SNE2

Cypress Semiconductor

IC MCU 8BIT 60KB FLASH 48LQFP

SSCMRRN100MGAF5

SSCMRRN100MGAF5

Honeywell Sensing and Productivity Solutions

SENSOR PRES .1BAR GAUG 5V SMD

IS43TR16128D-125KBLI

IS43TR16128D-125KBLI

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

AD7994BRU-0REEL

AD7994BRU-0REEL

Analog Devices

IC ADC 12BIT SAR 16TSSOP

MT25QL256ABA8ESF-0SIT

MT25QL256ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 256M SPI 133MHZ 16SOP2

WSLP1206R0500FEA

WSLP1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 1206

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

SI8233BB-D-IS

SI8233BB-D-IS

Silicon Labs

DGTL ISO 2.5KV GATE DRVR 16SOIC

BC560CTA

BC560CTA

ON Semiconductor

TRANS PNP 45V 0.1A TO-92

STW14NM50

STW14NM50

STMicroelectronics

MOSFET N-CH 550V 14A TO-247