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IRF3315L

IRF3315L

For Reference Only

Part Number IRF3315L
PNEDA Part # IRF3315L
Description MOSFET N-CH 150V 21A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,074
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3315L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3315L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3315L, IRF3315L Datasheet (Total Pages: 10, Size: 197.24 KB)
PDFIRF3315STRR Datasheet Cover
IRF3315STRR Datasheet Page 2 IRF3315STRR Datasheet Page 3 IRF3315STRR Datasheet Page 4 IRF3315STRR Datasheet Page 5 IRF3315STRR Datasheet Page 6 IRF3315STRR Datasheet Page 7 IRF3315STRR Datasheet Page 8 IRF3315STRR Datasheet Page 9 IRF3315STRR Datasheet Page 10

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IRF3315L Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs82mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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