Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF3415L

IRF3415L

For Reference Only

Part Number IRF3415L
PNEDA Part # IRF3415L
Description MOSFET N-CH 150V 43A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,660
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3415L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3415L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3415L, IRF3415L Datasheet (Total Pages: 11, Size: 161.82 KB)
PDFIRF3415STRR Datasheet Cover
IRF3415STRR Datasheet Page 2 IRF3415STRR Datasheet Page 3 IRF3415STRR Datasheet Page 4 IRF3415STRR Datasheet Page 5 IRF3415STRR Datasheet Page 6 IRF3415STRR Datasheet Page 7 IRF3415STRR Datasheet Page 8 IRF3415STRR Datasheet Page 9 IRF3415STRR Datasheet Page 10 IRF3415STRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF3415L Datasheet
  • where to find IRF3415L
  • Infineon Technologies

  • Infineon Technologies IRF3415L
  • IRF3415L PDF Datasheet
  • IRF3415L Stock

  • IRF3415L Pinout
  • Datasheet IRF3415L
  • IRF3415L Supplier

  • Infineon Technologies Distributor
  • IRF3415L Price
  • IRF3415L Distributor

IRF3415L Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs42mOhm @ 22A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

HUFA76419S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 25V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NDT014L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

160mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

214pF @ 30V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA

FQD30N06TF_F080

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

22.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 11.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

945pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 44W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

49mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

6.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

255nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13800pF @ 25V

FET Feature

-

Power Dissipation (Max)

1560W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA

SIJA52ADP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

41.6A (Ta), 131A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.63mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

5500pF @ 20V

FET Feature

-

Power Dissipation (Max)

4.8W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

MAX3162EAI

MAX3162EAI

Maxim Integrated

IC TRANSCEIVER FULL 2/2 28SSOP

AK4480EF

AK4480EF

AKM Semiconductor Inc.

IC DAC/AUDIO 32BIT 216K 30VSOP

HEDS-5500#F04

HEDS-5500#F04

Broadcom

ROTARY ENCODER OPTICAL 256PPR

LSM115JE3/TR13

LSM115JE3/TR13

Microsemi

DIODE SCHOTTKY 15V 1A DO214BA

ISL3152EIPZ

ISL3152EIPZ

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8DIP

MAX1853EXT

MAX1853EXT

Maxim Integrated

IC REG CHARGE PUMP INV SC70-6

CY7C1071DV33-12BAXI

CY7C1071DV33-12BAXI

Cypress Semiconductor

IC SRAM 32M PARALLEL 48FBGA

PIC18F1220-I/SO

PIC18F1220-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

PCF8575TS/1,112

PCF8575TS/1,112

NXP

IC I/O EXPANDER I2C 16B 24SSOP

KSZ9031RNXIC-TR

KSZ9031RNXIC-TR

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

ADM6820ARJZ-REEL7

ADM6820ARJZ-REEL7

Analog Devices

IC POWER SEQUENCER SOT23-6

LM358DR

LM358DR

Rohm Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC