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IRF3707ZS

IRF3707ZS

For Reference Only

Part Number IRF3707ZS
PNEDA Part # IRF3707ZS
Description MOSFET N-CH 30V 59A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,456
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3707ZS Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3707ZS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3707ZS, IRF3707ZS Datasheet (Total Pages: 13, Size: 407.7 KB)
PDFIRF3707ZSTRLP Datasheet Cover
IRF3707ZSTRLP Datasheet Page 2 IRF3707ZSTRLP Datasheet Page 3 IRF3707ZSTRLP Datasheet Page 4 IRF3707ZSTRLP Datasheet Page 5 IRF3707ZSTRLP Datasheet Page 6 IRF3707ZSTRLP Datasheet Page 7 IRF3707ZSTRLP Datasheet Page 8 IRF3707ZSTRLP Datasheet Page 9 IRF3707ZSTRLP Datasheet Page 10 IRF3707ZSTRLP Datasheet Page 11

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IRF3707ZS Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1210pF @ 15V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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