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IRF3710L

IRF3710L

For Reference Only

Part Number IRF3710L
PNEDA Part # IRF3710L
Description MOSFET N-CH 100V 57A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,040
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3710L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3710L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3710L, IRF3710L Datasheet (Total Pages: 10, Size: 296.74 KB)
PDFIRF3710L Datasheet Cover
IRF3710L Datasheet Page 2 IRF3710L Datasheet Page 3 IRF3710L Datasheet Page 4 IRF3710L Datasheet Page 5 IRF3710L Datasheet Page 6 IRF3710L Datasheet Page 7 IRF3710L Datasheet Page 8 IRF3710L Datasheet Page 9 IRF3710L Datasheet Page 10

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IRF3710L Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs23mOhm @ 28A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3130pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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