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IRF3711L

IRF3711L

For Reference Only

Part Number IRF3711L
PNEDA Part # IRF3711L
Description MOSFET N-CH 20V 110A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,110
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3711L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3711L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3711L, IRF3711L Datasheet (Total Pages: 12, Size: 269.62 KB)
PDFIRF3711STRR Datasheet Cover
IRF3711STRR Datasheet Page 2 IRF3711STRR Datasheet Page 3 IRF3711STRR Datasheet Page 4 IRF3711STRR Datasheet Page 5 IRF3711STRR Datasheet Page 6 IRF3711STRR Datasheet Page 7 IRF3711STRR Datasheet Page 8 IRF3711STRR Datasheet Page 9 IRF3711STRR Datasheet Page 10 IRF3711STRR Datasheet Page 11

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IRF3711L Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2980pF @ 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 120W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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