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IRF3711Z

IRF3711Z

For Reference Only

Part Number IRF3711Z
PNEDA Part # IRF3711Z
Description MOSFET N-CH 20V 92A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,478
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3711Z Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3711Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3711Z, IRF3711Z Datasheet (Total Pages: 13, Size: 302.04 KB)
PDFIRF3711ZSTRR Datasheet Cover
IRF3711ZSTRR Datasheet Page 2 IRF3711ZSTRR Datasheet Page 3 IRF3711ZSTRR Datasheet Page 4 IRF3711ZSTRR Datasheet Page 5 IRF3711ZSTRR Datasheet Page 6 IRF3711ZSTRR Datasheet Page 7 IRF3711ZSTRR Datasheet Page 8 IRF3711ZSTRR Datasheet Page 9 IRF3711ZSTRR Datasheet Page 10 IRF3711ZSTRR Datasheet Page 11

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IRF3711Z Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2150pF @ 10V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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