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IRF3711ZCLPBF

IRF3711ZCLPBF

For Reference Only

Part Number IRF3711ZCLPBF
PNEDA Part # IRF3711ZCLPBF
Description MOSFET N-CH 20V 92A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,236
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3711ZCLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3711ZCLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3711ZCLPBF, IRF3711ZCLPBF Datasheet (Total Pages: 12, Size: 352.65 KB)
PDFIRF3711ZCSTRLP Datasheet Cover
IRF3711ZCSTRLP Datasheet Page 2 IRF3711ZCSTRLP Datasheet Page 3 IRF3711ZCSTRLP Datasheet Page 4 IRF3711ZCSTRLP Datasheet Page 5 IRF3711ZCSTRLP Datasheet Page 6 IRF3711ZCSTRLP Datasheet Page 7 IRF3711ZCSTRLP Datasheet Page 8 IRF3711ZCSTRLP Datasheet Page 9 IRF3711ZCSTRLP Datasheet Page 10 IRF3711ZCSTRLP Datasheet Page 11

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IRF3711ZCLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2150pF @ 10V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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