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IRF520N

IRF520N

For Reference Only

Part Number IRF520N
PNEDA Part # IRF520N
Description MOSFET N-CH 100V 9.7A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF520N Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF520N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF520N, IRF520N Datasheet (Total Pages: 8, Size: 116.9 KB)
PDFIRF520N Datasheet Cover
IRF520N Datasheet Page 2 IRF520N Datasheet Page 3 IRF520N Datasheet Page 4 IRF520N Datasheet Page 5 IRF520N Datasheet Page 6 IRF520N Datasheet Page 7 IRF520N Datasheet Page 8

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IRF520N Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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