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IRF520NS

IRF520NS

For Reference Only

Part Number IRF520NS
PNEDA Part # IRF520NS
Description MOSFET N-CH 100V 9.7A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,790
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF520NS Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF520NS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF520NS, IRF520NS Datasheet (Total Pages: 11, Size: 190.43 KB)
PDFIRF520NSTRR Datasheet Cover
IRF520NSTRR Datasheet Page 2 IRF520NSTRR Datasheet Page 3 IRF520NSTRR Datasheet Page 4 IRF520NSTRR Datasheet Page 5 IRF520NSTRR Datasheet Page 6 IRF520NSTRR Datasheet Page 7 IRF520NSTRR Datasheet Page 8 IRF520NSTRR Datasheet Page 9 IRF520NSTRR Datasheet Page 10 IRF520NSTRR Datasheet Page 11

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IRF520NS Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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