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IRF5210L

IRF5210L

For Reference Only

Part Number IRF5210L
PNEDA Part # IRF5210L
Description MOSFET P-CH 100V 40A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,088
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5210L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5210L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF5210L, IRF5210L Datasheet (Total Pages: 11, Size: 192.14 KB)
PDFIRF5210L Datasheet Cover
IRF5210L Datasheet Page 2 IRF5210L Datasheet Page 3 IRF5210L Datasheet Page 4 IRF5210L Datasheet Page 5 IRF5210L Datasheet Page 6 IRF5210L Datasheet Page 7 IRF5210L Datasheet Page 8 IRF5210L Datasheet Page 9 IRF5210L Datasheet Page 10 IRF5210L Datasheet Page 11

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IRF5210L Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 24A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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