IRF5210SPBF
For Reference Only
| Part Number | IRF5210SPBF |
| PNEDA Part # | IRF5210SPBF |
| Manufacturer | Infineon Technologies |
| Description | MOSFET P-CH 100V 38A D2PAK |
| Unit Price |
|
| In Stock | 8,640 |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Payment |  |
| Shipping |  |
| Estimated Delivery | Oct 23 - Oct 28 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [PNEDA-Warranty]* |
IRF5210SPBF Resources
| Brand | Infineon Technologies |
| Mfr. Part Number | IRF5210SPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
IRF5210SPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 38A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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