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IRF540N_R4942

IRF540N_R4942

For Reference Only

Part Number IRF540N_R4942
PNEDA Part # IRF540N_R4942
Description MOSFET N-CH 100V 33A TO-220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF540N_R4942 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberIRF540N_R4942
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF540N_R4942, IRF540N_R4942 Datasheet (Total Pages: 10, Size: 132.65 KB)
PDFIRF540N_R4942 Datasheet Cover
IRF540N_R4942 Datasheet Page 2 IRF540N_R4942 Datasheet Page 3 IRF540N_R4942 Datasheet Page 4 IRF540N_R4942 Datasheet Page 5 IRF540N_R4942 Datasheet Page 6 IRF540N_R4942 Datasheet Page 7 IRF540N_R4942 Datasheet Page 8 IRF540N_R4942 Datasheet Page 9 IRF540N_R4942 Datasheet Page 10

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IRF540N_R4942 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs79nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1220pF @ 25V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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