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IRF5800TR

IRF5800TR

For Reference Only

Part Number IRF5800TR
PNEDA Part # IRF5800TR
Description MOSFET P-CH 30V 4A 6-TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,320
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5800TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5800TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF5800TR, IRF5800TR Datasheet (Total Pages: 8, Size: 109.02 KB)
PDFIRF5800TR Datasheet Cover
IRF5800TR Datasheet Page 2 IRF5800TR Datasheet Page 3 IRF5800TR Datasheet Page 4 IRF5800TR Datasheet Page 5 IRF5800TR Datasheet Page 6 IRF5800TR Datasheet Page 7 IRF5800TR Datasheet Page 8

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IRF5800TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs85mOhm @ 4A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds535pF @ 25V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package / CaseSOT-23-6 Thin, TSOT-23-6

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