Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF5806

IRF5806

For Reference Only

Part Number IRF5806
PNEDA Part # IRF5806
Description MOSFET P-CH 20V 4A 6-TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5806 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5806
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF5806, IRF5806 Datasheet (Total Pages: 9, Size: 124.7 KB)
PDFIRF5806 Datasheet Cover
IRF5806 Datasheet Page 2 IRF5806 Datasheet Page 3 IRF5806 Datasheet Page 4 IRF5806 Datasheet Page 5 IRF5806 Datasheet Page 6 IRF5806 Datasheet Page 7 IRF5806 Datasheet Page 8 IRF5806 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF5806 Datasheet
  • where to find IRF5806
  • Infineon Technologies

  • Infineon Technologies IRF5806
  • IRF5806 PDF Datasheet
  • IRF5806 Stock

  • IRF5806 Pinout
  • Datasheet IRF5806
  • IRF5806 Supplier

  • Infineon Technologies Distributor
  • IRF5806 Price
  • IRF5806 Distributor

IRF5806 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs86mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.4nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds594pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package / CaseSOT-23-6 Thin, TSOT-23-6

The Products You May Be Interested In

STP19NM65N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

15.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 7.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 50V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

C3M0065090D

Cree/Wolfspeed

Manufacturer

Cree/Wolfspeed

Series

C3M™

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

78mOhm @ 20A, 15V

Vgs(th) (Max) @ Id

2.1V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

30.4nC @ 15V

Vgs (Max)

+18V, -8V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 600V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

NTTFS5CS70NLTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

DMT10H072LFDF-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

62mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

266pF @ 50V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6

Package / Case

6-UDFN Exposed Pad

IXTP28N15P

IXYS

Manufacturer

IXYS

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

AD1580ART-REEL

AD1580ART-REEL

Analog Devices

IC VREF SHUNT 1.225V SOT23

MC9S08LL8CLF

MC9S08LL8CLF

NXP

IC MCU 8BIT 10KB FLASH 48LQFP

PIC18F2331-I/SO

PIC18F2331-I/SO

Microchip Technology

IC MCU 8BIT 8KB FLASH 28SOIC

CD40106BCN

CD40106BCN

ON Semiconductor

IC INVERTER SCHMITT 6CH 14DIP

SMBJ30CA-13-F

SMBJ30CA-13-F

Diodes Incorporated

TVS DIODE 30V 48.4V SMB

CY7C65632-28LTXCT

CY7C65632-28LTXCT

Cypress Semiconductor

IC CONTROLLER USB 28QFN

STD03P

STD03P

Sanken

TRANS PNP DARL 160V 15A TO-3P-5

MAX3078EESA+T

MAX3078EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

SS14-E3/61T

SS14-E3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO214AC

PFS7539H

PFS7539H

Power Integrations

IC PFC CTLR 1000W 180VAC 16ESIP

VRF150MP

VRF150MP

Microsemi

RF MOSFET N-CHANNEL 50V M174

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP