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IRF5806

IRF5806

For Reference Only

Part Number IRF5806
PNEDA Part # IRF5806
Description MOSFET P-CH 20V 4A 6-TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5806 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5806
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF5806, IRF5806 Datasheet (Total Pages: 9, Size: 124.7 KB)
PDFIRF5806 Datasheet Cover
IRF5806 Datasheet Page 2 IRF5806 Datasheet Page 3 IRF5806 Datasheet Page 4 IRF5806 Datasheet Page 5 IRF5806 Datasheet Page 6 IRF5806 Datasheet Page 7 IRF5806 Datasheet Page 8 IRF5806 Datasheet Page 9

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IRF5806 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs86mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.4nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds594pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package / CaseSOT-23-6 Thin, TSOT-23-6

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