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IRF5810

IRF5810

For Reference Only

Part Number IRF5810
PNEDA Part # IRF5810
Description MOSFET 2P-CH 20V 2.9A 6TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5810 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5810
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IRF5810, IRF5810 Datasheet (Total Pages: 9, Size: 129.87 KB)
PDFIRF5810TR Datasheet Cover
IRF5810TR Datasheet Page 2 IRF5810TR Datasheet Page 3 IRF5810TR Datasheet Page 4 IRF5810TR Datasheet Page 5 IRF5810TR Datasheet Page 6 IRF5810TR Datasheet Page 7 IRF5810TR Datasheet Page 8 IRF5810TR Datasheet Page 9

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IRF5810 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.9A
Rds On (Max) @ Id, Vgs90mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 16V
Power - Max960mW
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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