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IRF5852

IRF5852

For Reference Only

Part Number IRF5852
PNEDA Part # IRF5852
Description MOSFET 2N-CH 20V 2.7A 6-TSOP
Manufacturer Infineon Technologies
Unit Price
1 ---------- $4.9417
250 ---------- $4.7101
500 ---------- $4.4784
1,000 ---------- $4.2468
2,500 ---------- $4.0537
5,000 ---------- $3.8607
In Stock 36,857
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5852 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5852
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IRF5852, IRF5852 Datasheet (Total Pages: 9, Size: 126.63 KB)
PDFIRF5852TR Datasheet Cover
IRF5852TR Datasheet Page 2 IRF5852TR Datasheet Page 3 IRF5852TR Datasheet Page 4 IRF5852TR Datasheet Page 5 IRF5852TR Datasheet Page 6 IRF5852TR Datasheet Page 7 IRF5852TR Datasheet Page 8 IRF5852TR Datasheet Page 9

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IRF5852 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.7A
Rds On (Max) @ Id, Vgs90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 15V
Power - Max960mW
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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Current - Continuous Drain (Id) @ 25°C

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Current - Continuous Drain (Id) @ 25°C

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Supplier Device Package

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Drain to Source Voltage (Vdss)

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Mounting Type

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Package / Case

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Supplier Device Package

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