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IRF6100

IRF6100

For Reference Only

Part Number IRF6100
PNEDA Part # IRF6100
Description MOSFET P-CH 20V 5.1A FLIP-FET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6100 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6100
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6100, IRF6100 Datasheet (Total Pages: 8, Size: 636.1 KB)
PDFIRF6100 Datasheet Cover
IRF6100 Datasheet Page 2 IRF6100 Datasheet Page 3 IRF6100 Datasheet Page 4 IRF6100 Datasheet Page 5 IRF6100 Datasheet Page 6 IRF6100 Datasheet Page 7 IRF6100 Datasheet Page 8

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IRF6100 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs65mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1230pF @ 15V
FET Feature-
Power Dissipation (Max)2.2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-FlipFet™
Package / Case4-FlipFet™

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