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IRF610PBF

IRF610PBF

For Reference Only

Part Number IRF610PBF
PNEDA Part # IRF610PBF
Description MOSFET N-CH 200V 3.3A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 57,102
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF610PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF610PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF610PBF, IRF610PBF Datasheet (Total Pages: 9, Size: 277.32 KB)
PDFIRF610 Datasheet Cover
IRF610 Datasheet Page 2 IRF610 Datasheet Page 3 IRF610 Datasheet Page 4 IRF610 Datasheet Page 5 IRF610 Datasheet Page 6 IRF610 Datasheet Page 7 IRF610 Datasheet Page 8 IRF610 Datasheet Page 9

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IRF610PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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