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IRF630

IRF630

For Reference Only

Part Number IRF630
PNEDA Part # IRF630
Description MOSFET N-CH 200V 9A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 183,240
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF630 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberIRF630
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF630, IRF630 Datasheet (Total Pages: 14, Size: 332.34 KB)
PDFIRF630FP Datasheet Cover
IRF630FP Datasheet Page 2 IRF630FP Datasheet Page 3 IRF630FP Datasheet Page 4 IRF630FP Datasheet Page 5 IRF630FP Datasheet Page 6 IRF630FP Datasheet Page 7 IRF630FP Datasheet Page 8 IRF630FP Datasheet Page 9 IRF630FP Datasheet Page 10 IRF630FP Datasheet Page 11

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IRF630 Specifications

ManufacturerSTMicroelectronics
SeriesMESH OVERLAY™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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